Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime
نویسندگان
چکیده
منابع مشابه
A photoluminescence study of δ-doped GaAs
Samples of GaAs 8-doped with beryllium have been studied with photoluminescence. With a lightly doped sample, (2 x 1016 Be atoms per m2) a spectral feature is observed which can be interpreted as caused by radiative recombinations between spatially non-confined conductionband electrons and acceptor-related holes forming a miniband system confined spatially to the &doped region. With higher dens...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1997
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.92.727